Professor Emeritus
Professor Emeritus
- 1948 - 1952 B. Sc. , Chemical Engineering,Technion, Israel.
- Institute of Technology, Haifa, Israel.
- 1954 Diplome Engineer
- 1959 - 1960 M. Sc. , Metallurgy, Illinois Institute of Technology,Chicago, Illinois, USA.
- 1961 - 1963 Ph. D. , Metallurgy, University of Wisconsin, Madison, Wisconsin.
- Physical metallurgy: Diffusion and kinetics in solids and thin films; Thin films: Silicides and other thin films, Diffusion barriers ( nitrides, borides, aluminides. etc.), Schottky diodes; Superconductivity in Mg and Ag borides.
- Giant magnetoresistivity in granular structures with Prof. G. Gorodetzky and Dr. Revzin, funded: Ministry of Science; Giant magnetoresistivity in heterogeneous systems with Prof. G. Gorodetsky, funded: Israel Academy of Science; Magnetic and magneto-transport properties of heterogeneous magnetic layers with Prof. I. Felner (Hebrew University), Prof. G. Gorodetsky and Prof. S. Shtrikman;(Weizmann Inst.), funded: Israel Academy of Science; Superconductivity in MgB2 with Prof. I. Felner (Hebrew University), Professor Shimon Reich (Weizmann Institute), Professor S. Goren (Physics dept.) and Dr. M. Sinder Materials Engineering).
- Schottky barrier formation at Cu/TiB2/TiSi2/Si interface: The TiB2/TiSi2/Si system has been examined as a potential Schottky barrier contact suitable for very large scale integration circuits in silicon technology. The current-voltage characteristics of diodes based on the above system were studied and the effect of postsilicidation heat treatment on the barrier height and the ideality factor were evaluated. The Schottky barrier height and the ideality factor at a temperature interval of 300-973K were in the range of 0.65-0.68V and 1.03-1.08, respectively. .
- Diffusion-enhancement factor in BCC metals: The solute enhancement factor B was calculated for BCC alloys containing small concentration of solute. Only the second term in the equation D2(c) = D2(0)[1 + B1c + B2c2 +.] was taken into account. It was shown that if Schottky barrier height of TiN/p-type Si (100) evaluated by forward current-voltage and capacitance: Schottky barrier height (fBp) of amorphous TiN (~40 nm) diode on p-type Si(100) obtained by reactive sputtering was determined by forward current-voltage(I-Vf) aand capacitance-voltage (C-V) measurements at room temperature and the effect of heat treatment was examined. The TiN remained amorphous following annealing. The zero-bias barrier heights evaluated by I-Vf of the as-deposited and annealed specimens were in the range of 0.53-0.64 V with an average of ~0.58. The lower fBp values of 0.53-0.54 V are related to the as deposited and 673 K annealed specimens whereas the 0.62-0.64 V values refer to samples annealed at 773–873 K. Forward I-V measurements of as-deposited TiN/Si diodes were performed over the temperature range of 220 – 285 K. The activation energy evaluated from the ln(Js/T2) versus 1/T plot exhibits a linear relation through the entire temperature range. From the slope of this plot, the barrier height was determined at the saturation current density resulting in fBp=0.58 V, which is the same as the average value obtained from room temperature I-Vf measurements. Capacitance measurements at 1 MHz resulted in higher barrier heights than those obtained from I-Vf measurements in the range of 0.760.81 V. In the case of nonlinear C-V plots, an excess capacitance was taken into account for correcting the derived fBp values. Nonideal behavior was observed in some diodes, which was attributed to the effect of N on the interface.
- Compositional and structural changes in TiB2 films induced by bias, in-situ and post-deposition annealing, respectively. Structural changes in TiB2 films were induced at relatively low temperatures by the application of bias and ion situ annealing or by post-deposition heat treatment of samples subjected to bias with simultaneous in situ annealing. In situ annealing by itself evoked only partial crystallization. Application of bias by itself only modified the composition of the as deposited film. A simple model is presented to explain the variation of the composition when RF bias is applied to a cold substrate. The crystallized films had a (0001) texture. A nodel has been suggested to explain the observed preferred orientation, based on the contribution of surface and strain energies. Both, the surface energy and the strain energy are direction dependent. These were evaluated for two film orientations reported in the literature, namely, the (0001) and (1011) orientations. The preferred orientation of the film is determined by the lowest overall free energy resulting from the competition between the surface energy and strain energy on different lattice planes. The surface energy is not film thickness dependent while the strain energy is thickness dependent and increases with it. For small film thickness, as in this work, the surface energy term is significant and the (0001) orientation with a minimum surface energy is preferred. At large film thicknesses the strain energy becomes dominant and the (1011) preferred orientation is observed. Under certain experimental conditions strain energy effects may tip the preferred orientation to (1011). The elastic moduli in the (0001) and (1011)directions were determined as 435 and 538 CPa, respectively.